First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory

Publisher： IOP Publishing

E-ISSN： 1741-4199|23|12|127301-127306

ISSN： 1674-1056

Source： Chinese Physics B, Vol.23, Iss.12, 2014-12, pp. : 127301-127306

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