Author： Cai Duanjun Lin Na Xu Hongmei Liao Che-Hao Yang C C
Publisher： IOP Publishing
E-ISSN： 1361-6528|25|49|495705-495711
ISSN： 0957-4484
Source： Nanotechnology, Vol.25, Iss.49, 2014-12, pp. : 495705-495711
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Atom probe tomography study of Mg-doped GaN layers
By Khromov S Gregorius D Schiller R Lösch J Wahl M Kopnarski M Amano H Monemar B Hultman L Pozina G
Nanotechnology, Vol. 25, Iss. 27, 2014-07 ,pp. :
Access to resources
Recommend
Dislocations and their reduction in GaN
Materials Science and Technology, Vol. 26, Iss. 9, 2010-09 ,pp. :
Regularly patterned multi-section GaN nanorod arrays grown with a pulsed growth technique
Nanotechnology, Vol. 27, Iss. 2, 2016-01 ,pp. :