Unipolar resistive switching behaviors and mechanisms in an annealed Ni/ZrO2/TaN memory device

E-ISSN： 1361-6463|48|3|35108-35113

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.3, 2015-01, pp. : 35108-35113

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