Hg5AsS2I3 – A Narrow‐Band‐Gap 2D Layered Compound with Different Trapped I– Anions

Publisher: John Wiley & Sons Inc

E-ISSN: 1099-0682|2015|14|2402-2406

ISSN: 1434-1948

Source: EUROPEAN JOURNAL OF INORGANIC CHEMISTRY (ELECTRONIC), Vol.2015, Iss.14, 2015-05, pp. : 2402-2406

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Abstract