Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices

Publisher: John Wiley & Sons Inc

E-ISSN: 1521-4095|27|40|6170-6175

ISSN: 0935-9648

Source: ADVANCED MATERIALS, Vol.27, Iss.40, 2015-10, pp. : 6170-6175

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract