Publisher： Trans Tech Publications
E-ISSN： 1662-9779|2015|233|415-418
ISSN： 1012-0394
Source： Solid State Phenomena, Vol.2015, Iss.233, 2015-07, pp. : 415-5
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Abstract
In the present work the possibility of simultaneous localization of two electrons in Δ<sup>100</sup> and Δ<sup>001</sup> valleys in ordered structures with Ge/Si quantum dots (QD) was verified experimentally by electron spin resonance (ESR) method. ESR spectra obtained for the ordered ten-layered QD structure in the dark shows the signal corresponding to electron localization in Si at the Ge QD base edges, in Δ<sup>100</sup>, Δ<sup>010</sup> valleys (<i>g</i><i><sub>zz</sub></i>=1.9985, <i>g</i><i><sub>in-plane</sub></i>=1.999). Light illumination causes the appearance of a new ESR line (<i>g</i><i><sub>zz</sub></i>=1.999) attributed to the electrons in Δ<sup>001</sup> valley localized at the QD apexes. Observed effect is explained by enhancement of electron confienment near QD apex by Coloumb attraction to the photogenerated hole trapped in Ge QD.
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