A Multilevel Intermediate‐Band Solar Cell by InGaN/GaN Quantum Dots with a Strain‐Modulated Structure

E-ISSN： 1521-4095|26|9|1414-1420

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.26, Iss.9, 2014-03, pp. : 1414-1420

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

By Huang J.S. Chen Z. Luo X.D. Xu Z.Y. Ge W.K.

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 13-17

Elsevier

Access to resources Recommend Favorite

Progress in the optical studies of single InGaN/GaN quantum dots

By Jarjour A. F.

Philosophical Magazine, Vol. 87, Iss. 13, 2007-01 ,pp. : 2077-2093

Taylor & Francis Ltd

Access to resources Recommend Favorite

In‐plane coupling effect on absorption coefficients of InAs/GaAs quantum dots arrays for intermediate band solar cell

PROGRESS IN PHOTOVOLTAICS: RESEARCH & APPLICATIONS, Vol. 23, Iss. 5, 2015-05 ,pp. : 546-558

John Wiley & Sons Inc

Access to resources Recommend Favorite

Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 925-929

John Wiley & Sons Inc

Access to resources Recommend Favorite

Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells

By Grahn H.T. Ploog K.H.

Applied Physics A, Vol. 78, Iss. 4, 2004-03 ,pp. : 447-451

Springer Publishing Company

Access to resources Recommend Favorite