Publisher： John Wiley & Sons Inc
E-ISSN： 1521-3951|252|11|2418-2422
ISSN： 0370-1972
Source： PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.252, Iss.11, 2015-11, pp. : 2418-2422
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
High Temperature Grown Graphene on SiC Studied by Raman and FTIR Spectroscopy
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Access to resources
Recommend
High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure
Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. :
Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 11, 2015-11 ,pp. :