Characterization of vertical Au/β-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

Author： Liu X Z   Yue C   Xia C T   Zhang W L  

Publisher： IOP Publishing

E-ISSN： 1741-4199|25|1|17201-17205

ISSN： 1674-1056

Source： Chinese Physics B, Vol.25, Iss.1, 2016-01, pp. : 17201-17205

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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