Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

Author: Ishikawa Yasuaki   Fujii Mami N   Nonaka Toshiaki   Ishihara Ryoichi   Ikenoue Hiroshi   Uraoka Yukiharu   Ishikawa Yasuaki  

Publisher: IOP Publishing

E-ISSN: 1361-6463|49|3|35102-35108

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.49, Iss.3, 2016-01, pp. : 35102-35108

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