High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In_0.1Ga_0.9As/AlGaAs/GaAs heterostructures

By Aleksandrov S.   Alekseev A.   Demidov D.   Dudin A.   Katsavets N.   Kogan I.   Pogorel’skii Yu.   Ter-Martirosyan A.   Sokolov É.   Chaly V.   Shkurko A.  

Technical Physics Letters, Vol. 28, Iss. 8, 2002-08 ,pp. : 696-698

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of a wideband heteroepitaxial emitter on dynamics of turn-off switching of high-voltage power GaAs p-i-n diodes

By  

Journal of Physics: Conference Series , Vol. 690, Iss. 1, 2016-02 ,pp. : 219-221

IOP Publishing

Access to resources Recommend Favorite

SWITCHING SPEED ENHANCEMENT OF NOVEL SUPERLATTICE GaAs PIN DIODES

By  

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-281-C5-284

Edp Sciences

Access to resources Recommend Favorite

High-voltage GaAs diodes with subnanosecond gate voltage recovery

By Korol’kov V.   Rozhkov A.   Petropavlovskaya L.  

Technical Physics Letters, Vol. 27, Iss. 9, 2001-09 ,pp. : 731-733

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures

By Livshits D.   Kovsh A.   Zhukov A.   Maleev N.   Mikhrin S.   Vasil’ev A.   Nikitina E.   Ustinov V.   Ledentsov N.   Lin G.   Chi J.  

Technical Physics Letters, Vol. 30, Iss. 1, 2004-01 ,pp. : 9-11

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite