Characterization of Thermally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|449-452

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 449-452

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 331-334

Trans Tech Publications

Access to resources Recommend Favorite

Two-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 127-130

Trans Tech Publications

Access to resources Recommend Favorite

Characterization of Inhomogeneity in SiO2 Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 460-463

Trans Tech Publications

Access to resources Recommend Favorite

Physical Characterisation of 3C-SiC(001)/SiO2 Interface Using XPS

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 151-154

Trans Tech Publications

Access to resources Recommend Favorite

Luminescence Properties of Phosphor (Sr1-xBax) 1.95 SiO4: 0.05Eu2+

By  

Materials Science Forum, Vol. 2015, Iss. 815, 2015-05 ,pp. : 304-308

Trans Tech Publications

Access to resources Recommend Favorite