Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2016|858|1074-1077
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 1074-1077
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Development of a PSPICE Model for 1200 V/800 A SiC Bipolar Junction Transistor Power Module
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Access to resources
Recommend
High-Temperature Transient Thermal Analysis for SiC Power Modules
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Negative Bias Temperature Instability of SiC MOSFET
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :