Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2016|858|1133-1136
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 1133-1136
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Access to resources
Recommend
Towards Wafer‐Scale Monocrystalline Graphene Growth and Characterization
SMALL, Vol. 11, Iss. 29, 2015-08 ,pp. :
Effect of Surface Damage on SiC Wafer Shape
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Bottom‐Up Nano‐heteroepitaxy of Wafer‐Scale Semipolar GaN on (001) Si
ADVANCED MATERIALS, Vol. 27, Iss. 33, 2015-09 ,pp. :