Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|978-981

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 978-981

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract

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