Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2016|858|225-228
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 225-228
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Al+ Ion Implanted On-Axis <0001> Semi-Insulating 4H-SiC
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. :
LACBED study of extended defects in 4H-SiC
By Texier M. Regula G. Lancin M. Pichaud B.
Philosophical Magazine Letters, Vol. 86, Iss. 9, 2006-09 ,pp. :
Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :