6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|939-944

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 939-944

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 435-438

Trans Tech Publications

Access to resources Recommend Favorite

27 kV, 20 A 4H-SiC n-IGBTs

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 847-850

Trans Tech Publications

Access to resources Recommend Favorite

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 842-846

Trans Tech Publications

Access to resources Recommend Favorite

10+ kV Implantation-Free 4H-SiC PiN Diodes

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 423-426

Trans Tech Publications

Access to resources Recommend Favorite

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 571-574

Trans Tech Publications

Access to resources Recommend Favorite