Amplification in Graphene Nanoribbon Junctions

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2016|858|1141-1144

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 1141-1144

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Abstract

All carbon three terminal junctions were fabricated from epitaxial graphene grown on semiinsulating Si-face 4H-SiC. It is demonstrated that self-contained gate devices exhibit current modulation characteristics. The obtained current gain depends on the device design and is controlled by the applied gate voltage.