Influence of Ti Doping on the Properties of Ge-Sb-Te Thin Films for Phase Change Memory

Publisher: Trans Tech Publications

E-ISSN: 1662-9779|2016|247|30-38

ISSN: 1012-0394

Source: Solid State Phenomena, Vol.2016, Iss.247, 2016-04, pp. : 30-38

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract