Publisher： Trans Tech Publications
E-ISSN： 1662-9795|2016|675|225-228
ISSN： 1013-9826
Source： Key Engineering Materials, Vol.2016, Iss.675, 2016-02, pp. : 225-228
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Abstract
In this research, NiO/ZnO heterojunction thin films were fabricated on a ITO substrate by a sol–gel technique. The as-prepared thin films were annealed at various temperatures. The effect of annealing temperature on structural, surface morphology and electrical properties of thin films was investigated by XRD, FESEM and I-V characteristic measurement. The XRD results revealed that NiO/ZnO thin film was polycrystalline and exhibited better crystallization when annealing temperature was increased. The current-voltage curve of all sample exhibited the diode behaviour.
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