Bias and 1/f Noise Degradation Modeling of 90 nm n-Channel MOSFETs Induced by Hot Carrier Stress

Publisher： Trans Tech Publications

E-ISSN： 1662-9795|2016|698|100-108

ISSN： 1013-9826

Source： Key Engineering Materials, Vol.2016, Iss.698, 2016-08, pp. : 100-108

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