Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2016|858|753-756
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 753-756
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes
Thin Solid Films, Vol. 446, Iss. 1, 2004-01 ,pp. :