Graphene-Silicon Heterojunction Infrared Photodiode at 1.3/1.55 μm

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|1153-1157

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 1153-1157

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Origin of Voltage‐Dependent High Ideality Factors in Graphene–Silicon Diodes

By  

ADVANCED ELECTRONIC MATERIALS, Vol. 4, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes

By  

CHEMSUSCHEM (ELECTRONIC) CHEMISTRY AND SUSTAINABILITY, ENERGY & MATERIALS, Vol. 8, Iss. 17, 2015-09 ,pp. : 2940-2947

John Wiley & Sons Inc

Access to resources Recommend Favorite

Photodetectors: High‐Responsivity Graphene/InAs Nanowire Heterojunction Near‐Infrared Photodetectors with Distinct Photocurrent On/Off Ratios (Small 8/2015)

By  

SMALL, Vol. 11, Iss. 8, 2015-02 ,pp. : 890-890

John Wiley & Sons Inc

Access to resources Recommend Favorite

High‐Responsivity Graphene/InAs Nanowire Heterojunction Near‐Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

By  

SMALL, Vol. 11, Iss. 8, 2015-02 ,pp. : 936-942

John Wiley & Sons Inc

Access to resources Recommend Favorite

Surface Transfer Doping‐Induced, High‐Performance Graphene/Silicon Schottky Junction‐Based, Self‐Powered Photodetector

By  

SMALL, Vol. 11, Iss. 37, 2015-10 ,pp. : 4829-4836

John Wiley & Sons Inc

Access to resources Recommend Favorite