High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2016|858|876-879

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 876-879

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Abstract