Dislocations as sinks for self-interstitials in gold doped silicon

Publisher: Edp Sciences

E-ISSN: 1286-4897|2|3|295-302

ISSN: 1155-4320

Source: Journal de Physique III, Vol.2, Iss.3, 1992-03, pp. : 295-302

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next