The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

Publisher： Edp Sciences

E-ISSN： 2261-236x|95|issue|01005-01005

ISSN： 2261-236x

Source： MATEC Web of conference, Vol.95, Iss.issue, 2017-02, pp. : 01005-01005

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