

Author: Vu Q. T. Bányai L. Tamborenea P. I. Haug H.
Publisher: Edp Sciences
E-ISSN: 1286-4854|40|3|323-328
ISSN: 0295-5075
Source: EPL (EUROPHYSICS LETTERS), Vol.40, Iss.3, 2010-03, pp. : 323-328
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Abstract
Resonant time-resolved four-wave–mixing spectra are calculated for direct-gap semiconductors. For pulses shorter than the build-up time of the Coulomb screening (given by the period of a typical plasma oscillation) the dephasing and relaxation of the excited carriers are dominated by the bare Coulomb potential scattering. The quantum kinetics of this regime results in an unusual decay law
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