Dependence of the radiative recombination lifetime upon electric field in silicon quantum dots embedded into

$\ab{SiO_2}$

E-ISSN： 1286-4854|51|2|168-173

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.51, Iss.2, 2010-03, pp. : 168-173

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