Modelling background charge rearrangements near single-electron transistors as a Poisson process

Author： Müller H.-O.   Furlan M.   Heinzel T.   Ensslin K.  

Publisher： Edp Sciences

E-ISSN： 1286-4854|55|2|253-259

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.55, Iss.2, 2010-03, pp. : 253-259

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