Publisher: Edp Sciences
E-ISSN: 1286-4854|82|4|47001-47001
ISSN: 0295-5075
Source: EPL (EUROPHYSICS LETTERS), Vol.82, Iss.4, 2008-05, pp. : 47001-47001
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
GATE CURRENTS AND DEVICE DEGRADATION : CARRIER TRANSPORT IN GATE OXIDES OF MOSFET's
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :
An interdigital gate MOSFET for photodetection
Journal de Physique III, Vol. 2, Iss. 12, 1992-12 ,pp. :
ABSORPTION OF BALLISTIC PHONONS BY THE 2D ELECTRON GAS IN A Si MOSFET
Le Journal de Physique Colloques, Vol. 42, Iss. C6, 1981-12 ,pp. :
Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length
Journal of Physics: Conference Series , Vol. 242, Iss. 1, 2010-07 ,pp. :