Fluence effect on ion-implanted $\chem{As}$ diffusion in relaxed $\chem{SiGe}$

E-ISSN： 1286-4854|72|3|416-422

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.72, Iss.3, 2005-11, pp. : 416-422

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