Band‐Gap Engineering of Graphene Heterostructures by Substitutional Doping with B3N3

Publisher: John Wiley & Sons Inc

E-ISSN: 1439-7641|19|2|237-242

ISSN: 1439-4235

Source: CHEMPHYSCHEM, Vol.19, Iss.2, 2018-01, pp. : 237-242

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract