Enhancing the Rate Performance of a Li₃VO₄ Anode through Cu Doping

E-ISSN： 2196-0216|5|3|478-482

ISSN： 2196-0216

Source： CHEMELECTROCHEM (ELECTRONIC), Vol.5, Iss.3, 2018-02, pp. : 478-482

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Abstract

AbstractLi₃VO₄ (LVO), as an emerging anode material for lithium‐ion batteries (LIBs), offers distinct advantages because of its high theoretical specific capacity (590 mAh g⁻¹), high ionic conductivity, and small volume change during lithiation/delithiation. However, the low electronic conductivity of LVO severely limits its viable application in LIBs. In this work, we doped LVO with Cu²⁺ ions through a simple solution reaction method, aiming to improve its electronic conductivity and electrochemical performances as a LIB anode. Among various dopant concentrations, LVO doped with 10 % Cu (LVO‐0.10Cu) showed the highest Li‐ion diffusion coefficient (2.79×10⁻¹⁴ cm² s⁻¹) and specific surface area (16.1 m² g⁻¹), as well as lowest charge‐transfer resistance. High reversible capacities of 440, 420, 379, and 335 mAh g⁻¹ were achieved at current densities of 1, 2, 4, and 8 A g⁻¹, respectively. In particular, the capacity of LVO‐0.10Cu at 8 A g⁻¹ was twice as high as that of pristine LVO (335 vs. 168 mAh g⁻¹). The significantly enhanced electrochemical performance of Cu‐doped LVO can be attributed to lattice expansion and improved electronic conductivity afforded by Cu‐doping.