Reversibility of defect formation during oxygen‐assisted electron‐beam‐induced etching of graphene

Publisher: John Wiley & Sons Inc

E-ISSN: 1097-4555|49|2|317-323

ISSN: 0377-0486

Source: JOURNAL OF RAMAN SPECTROSCOPY, Vol.49, Iss.2, 2018-02, pp. : 317-323

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Abstract