Exploring resistive switching‐based memristors in the charge–flux domain: A modeling approach

Publisher: John Wiley & Sons Inc

E-ISSN: 1097-007x|46|1|29-38

ISSN: 0098-9886

Source: INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, Vol.46, Iss.1, 2018-01, pp. : 29-38

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Abstract