Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Author: He Gang   Chen Xiaoshuang   Lv Jianguo   Chen Hanshuang   Deng Bin   Sun Zhaoqi  

Publisher: American Scientific Publishers

ISSN: 2164-6635

Source: Advanced Science, Engineering and Medicine, Vol.5, Iss.10, 2013-10, pp. : 1410-1417

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content