Electron beam-induced mass transport in As-Se thin films: compositional dependence and glass network topological effects

Author: Trunov M.L.   Cserháti C.   Lytvyn P.M.   Kaganovskii Yu   Kökényesi S.  

Publisher: IOP Publishing

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.46, Iss.24, 2013-06, pp. : 245303-245311

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Abstract

Electron beam (e-beam)-induced changes of surface profile morphology in AscSe1−c (0.2 < c < 0.5) thin films are investigated as a function of the film composition. It is shown that the extent and value of local surface alterations follow the composition-related changes of glass parameters such as softening temperature and glass network connectivity. The giant e-beam-induced surface relief changes detected in the films As0.2Se0.8 are connected with lateral mass transport, which increases drastically near rigidity transition, i.e. at a coordination number r ∼ 2.2 of the glass structures when the rigidity starts to percolate through the structure. The model of the process, which reflects the compositional dependence of the stimulated mass transport, is presented.