Investigation on the RESET switching mechanism of bipolar Cu/HfO 2 /Pt RRAM devices with a statistical methodology

Author： Yang Xiaoyi   Long Shibing   Zhang Kangwei   Liu Xiaoyu   Wang Guoming   Lian Xiaojuan   Liu Qi   Lv Hangbing   Wang Ming   Xie Hongwei   Sun Haitao   Sun Pengxiao   Suñé Jordi   Liu Ming  

Publisher： IOP Publishing

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.46, Iss.24, 2013-06, pp. : 245107-245114

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