Optimum design for minimum on-resistance of low voltage trench power MOSFET

Author： Hong J.-H.   Chung S.-K.   Choi Y.-I.  

Publisher： Elsevier

ISSN： 0026-2692

Source： Microelectronics, Vol.35, Iss.3, 2004-03, pp. : 287-289

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

A model for avalanche breakdown calculation in low-voltage trench power MOSFET devices

By Pace C   Pierro S   Cilia V   Consentino G  

Semiconductor Science and Technology, Vol. 28, Iss. 1, 2013-01 ,pp. : 15007-15012

IOP Publishing

Access to resources Recommend Favorite

A study of on-resistance and switching characteristics of the power MOSFET under cryogenic conditions

By Mauriello R. J.   Sundaram K. B.   Chow L. C.  

International Journal of Electronics, Vol. 87, Iss. 1, 2000-01 ,pp. : 99-106

Taylor & Francis Ltd

Access to resources Recommend Favorite

Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect

By  

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 24010-24016

IOP Publishing

Access to resources Recommend Favorite

A 800 V dual conduction paths segmented anode LIGBT with low specific on-resistance and small shift voltage

By Kun Mao   Ming Qiao   Bo Zhang   Zhaoji Li  

Journal of Semiconductors, Vol. 35, Iss. 5, 2014-05 ,pp. : 54004-54009

IOP Publishing

Access to resources Recommend Favorite

Trench angle: a key design factor for a deep trench superjunction MOSFET

By  

Semiconductor Science and Technology, Vol. 30, Iss. 12, 2015-12 ,pp. : 125008-125012

IOP Publishing

Access to resources Recommend Favorite