InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric

Author： Wei Mao   Yue Hao   Cui Yang   Jin-Cheng Zhang   Xiao-Hua Ma   Chong Wang   Hong-Xia Liu   Lin-An Yang   Jin-Feng Zhang   Xue-Feng Zheng   Kai Zhang   Yong-He Chen   Li-Yuan Yang  

Publisher： IOP Publishing

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.30, Iss.5, 2013-05, pp. : 58502-58505

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