GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation

Author： Wei-Zong Xu Li-Hua Fu Hai Lu Fang-Fang Ren Dun-Jun Chen Rong Zhang You-Dou Zheng

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.30, Iss.5, 2013-05, pp. : 57303-57306

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