Study of band-structure, optical properties and native defects in A I B III O 2 ( A I = Cu or Ag, B III = Al, Ga or In) delafossites

Author： Kumar Mukesh Zhao Hanyue Persson Clas

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.6, 2013-06, pp. : 65003-65012

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Theoretical Study of Electronic Structure and Thermoelectric Properties of Doped CuAlO 2

By Poopanya P.

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 987-991

Springer Publishing Company

Access to resources Recommend Favorite

Characterization and Electrical Properties of Al-Doped Cu(In,Ga)Se₂ Semiconductors with Various Cu Contents

By Monsefi Mehrdad Kuo Dong-Hau

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1214-1218

Springer Publishing Company

Access to resources Recommend Favorite

Modeling the elastic properties of the ternary III–V alloys InGaAs, InAlAs and GaAsSb using Tersoff potentials for binary compounds

By Detz H Strasser G

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85011-85017

IOP Publishing

Access to resources Recommend Favorite

Effect of N and Fe codoping on the electronic structure and optical properties of TiO₂ from first-principles study

By Zhuomao Zhu Baoan Bian Haifeng Shi

Journal of Semiconductors, Vol. 36, Iss. 10, 2015-10 ,pp. : 102003-102007

IOP Publishing

Access to resources Recommend Favorite

High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells

By Yongping Liao Yu Zhang Junliang Xing Sihang Wei Hongyue Hao Guowei Wang Yingqiang Xu Zhichuan Niu

Journal of Semiconductors, Vol. 36, Iss. 5, 2015-05 ,pp. : 54007-54010

IOP Publishing

Access to resources Recommend Favorite