Author： Hu W.
Publisher： Springer Publishing Company
ISSN： 0306-8919
Source： Optical and Quantum Electronics, Vol.42, Iss.11-13, 2011-10, pp. : 801-808
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
We report on two dimensional numerical simulations of photoresponse characteristic for mid-wavelength InSb infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated for both front-side and back-side illuminated devices. Optimal thickness of absorption layers for different diffusion lengths is extracted theoretically. Our work shows that the optimal thicknesses of absorption layers strongly depend on the minority carrier lifetimes. An empirical formula is proposed to predict reasonable optimal thicknesses of absorption layer by numerically analyzing its correlations with the diffusion lengths. It is also found that the positive interface fixed charge can reduce the spectral photoresponse due to the charge-induced p-n junction.
Related content
OPTICAL ABSORPTION STUDIES OF DISLOCATION INDUCED DEEP LEVELS IN InSb
Le Journal de Physique Colloques, Vol. 44, Iss. C4, 1983-09 ,pp. :
Access to resources
Recommend
Properties of the semiconductor InSb.
Journal de Physique et le Radium, Vol. 19, Iss. 2, 1958-02 ,pp. :