Related content

Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells

By Park J.H.   Ozaki S.   Mori N.   Hamaguchi C.  

Superlattices and Microstructures, Vol. 25, Iss. 1, 1999-01 ,pp. : 445-451

Academic Press

Access to resources Recommend Favorite

Effect of free electron-hole pairs on the saturation of excitonic absorption in GaAs/AlGaAs quantum wells

By Litvinenko K.   Lysenko V.   Hvam I.  

Physics of the Solid State, Vol. 40, Iss. 6, 1998-06 ,pp. : 1032-1034

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Photoluminescence observation of quantum confined stark effect caused by band bending near the surface of etched structures with GaAs/AlGaAs wells

By  

Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. : C5-277-C5-281

Edp Sciences

Access to resources Recommend Favorite

Photoluminescence spectroscopy on excitonic states of narrow GaAs–AlGaAs single quantum wells in high magnetic field

By Ko H.S.   Rhee S.J.   Kim Y.M.   Kim W.S.   Kim D.H.   Bae J.H.   Kim Y.S.   Woo J.C.   Kim D.W.   Schmiedel T.  

Superlattices and Microstructures, Vol. 24, Iss. 4, 1998-09 ,pp. : 259-262

Academic Press

Access to resources Recommend Favorite

Pressure effect on the electron mobility in AlAs/GaAs quantum wells

By Guo-Dong Hao   Shi-Liang Ban   Xiu-Min Jia  

Chinese Physics, Vol. 16, Iss. 12, 2007-12 ,pp. : 3766-3771

IOP Publishing

Access to resources Recommend Favorite