Specific features of gallium nitride selective epitaxy in round windows

Author： Lundin W.   Zavarin E.   Rozhavskaya M.   Troshkov S.   Tsatsulnikov A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.37, Iss.8, 2011-08, pp. : 735-738

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Abstract

Specific features of gallium nitride (GaN) selective growth by MOVPE in round windows has been studied. It is established that a decrease in the flux of ammonia results in an increase in the lateral size of crystallites, while the minimum studied fluxes lead to a decrease in the height of crystallites and the formation of (0001) and facets in addition to the usual facets. The phenomenon of growth suppression was observed for a fraction of crystallites at the onset of their coalescence. In addition, selective growth was suppressed near large nonmasked surface regions.

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