Nanostructured Bilayer Anodic TiO 2 /Al 2 O 3 Metal-Insulator-Metal Capacitor

Author： Karthik R.   Kannadassan D.   Baghini Maryam Shojaei   Mallick P. S.  

Publisher： American Scientific Publishers

ISSN： 1533-4899

Source： Journal of Nanoscience and Nanotechnology, Vol.13, Iss.10, 2013-10, pp. : 6894-6899

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Abstract

This paper presents the fabrication of high performance bilayer TiO2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/μm2, low quadratic voltage coefficient of capacitance of 150 ppm/V2 and a low leakage current density of 9.1 nA/cm2 at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO2/Al2O3 and improvement of electrical properties.

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