Investigation of the Flatband Voltage ( V FB ) Shift of Al 2 O 3 on N 2 Plasma Treated Si Substrate

Author： Kim Hyungchul Lee Jaesang Jeon Heeyoung Park Jingyu Jeon Hyeongtag

Publisher： American Scientific Publishers

ISSN： 1533-4899

Source： Journal of Nanoscience and Nanotechnology, Vol.13, Iss.9, 2013-09, pp. : 6275-6279

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