The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET

Author: Bin Wang   He-Ming Zhang   Hui-Yong Hu   Yu-Ming Zhang   Chun-Yu Zhou   Guan-Yu Wang   Yu-Chen Li  

Publisher: IOP Publishing

ISSN: 1674-1056

Source: Chinese Physics B, Vol.22, Iss.2, 2013-02, pp. : 28503-28508

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Abstract