Transport and optical properties of the layer semiconductor p-type GaSe doped with Li

Author: Shigetomi S.   Ikari T.  

Publisher: Taylor & Francis Ltd

ISSN: 1362-3036

Source: Philosophical Magazine Letters, Vol.79, Iss.8, 1999-08, pp. : 575-579

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Abstract

Hall effect and photoluminescence (PL) measurements have been made on Lidoped p-type GaSe. The carrier transport is dominated by the two acceptor levels located at about 0.04 and 0.08eV above the valence band. A new emission band at 2.030eV (at 77K) is observed in the PL spectra of samples. For the samples doped from 0.02 to 0.21 at.% , the PL intensity increases with increasing Li concentration. The acceptor level of 0.08eV observed by Hall effect measurements has the same energy position as the radiative recombination centre.