Author： Bonnet R.
Publisher： Taylor & Francis Ltd
ISSN： 1478-6443
Source： Philosophical Magazine, Vol.89, Iss.5, 2009-02, pp. : 413-434
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
The square dislocation network of a (0 0 1) buried small-angle boundary in silicon was observed by dark-field transmission electron microscopy to examine the structures of more than 100 dissociated dislocation segments. Images were taken with g = (2 2 0), using a many-beam case along the reciprocal lattice row. Dissociation occurs on alternate close-packed planes without systematic rule, although a degree of ordering is taking place. Most of the dislocation segments have lengths equal to half of the square network period. Image simulation studies revealed that their experimental contrasts cannot be explained from the usual assumption of straight dislocations running in an infinite crystal. However, if these dislocations are supposed close and parallel to a nearby free surface, a reasonable agreement is found between the micrographs and the simulated images. A three-dimensional elastic model is proposed to explain the contrasts of the dislocation network.
Related content
Access to resources
Recommend
